Diode SI2312CDS-T1-GE3

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Product Description

The following is the introduction of high quality E-Comp Diode SI2312CDS-T1-GE3, hoping to help you better understand Diode SI2312CDS-T1-GE3. Its products have been well accepted throughout the country and marketed worldwide to markets in Europe, the United States, Africa, and Australia.

E-Comp Group Inc SI2312CDS-T1-GE3 Integrated Circuit Parameter (Specification)

Digi-Key Part Number	SI2312CDS-T1-GE3TR-ND - Tape & Reel (TR) SI2312CDS-T1-GE3CT-ND - Cut Tape (CT) SI2312CDS-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SI2312CDS-T1-GE3
Description	MOSFET N-CH 20V 6A SOT23-3
Manufacturer Standard Lead Time	99 Weeks
Detailed Description	N-Channel 20 V 6A (Tc) 1.25W (Ta), 2.1W (Tc) Surface Mount SOT-23-3 (TO-236)

E-Comp Group Inc SI2312CDS-T1-GE3 Integrated Circuit Feature And Application

TYPE	DESCRIPTION
Category	Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single
Mfr	Vishay Siliconix
Series	-
Package	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	31.8mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 5 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	865 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	1.25W (Ta), 2.1W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3
Base Product Number	SI2312

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