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Diode SI2312CDS-T1-GE3
  • Diode SI2312CDS-T1-GE3Diode SI2312CDS-T1-GE3

Diode SI2312CDS-T1-GE3

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Product Description

The following is the introduction of high quality E-Comp Diode SI2312CDS-T1-GE3, hoping to help you better understand Diode SI2312CDS-T1-GE3. Its products have been well accepted throughout the country and marketed worldwide to markets in Europe, the United States, Africa, and Australia.

 

E-Comp  Group  Inc SI2312CDS-T1-GE3 Integrated Circuit Parameter (Specification)

Digi-Key Part Number

SI2312CDS-T1-GE3TR-ND - Tape & Reel (TR)

SI2312CDS-T1-GE3CT-ND - Cut Tape (CT)

SI2312CDS-T1-GE3DKR-ND - Digi-Reel®

Manufacturer

Vishay Siliconix

Manufacturer Product Number

SI2312CDS-T1-GE3

Description

MOSFET N-CH 20V 6A SOT23-3

Manufacturer Standard Lead Time

99 Weeks

Detailed Description

N-Channel 20 V 6A (Tc) 1.25W (Ta), 2.1W (Tc) Surface Mount SOT-23-3 (TO-236)

 

E-Comp  Group  Inc SI2312CDS-T1-GE3  Integrated Circuit Feature And Application

TYPE

DESCRIPTION

Category

Discrete Semiconductor Products

Transistors - FETs, MOSFETs - Single

Mfr

Vishay Siliconix

Series

-

Package

Tape & Reel (TR)

Cut Tape (CT)

Digi-Reel®

Product Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20 V

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

31.8mOhm @ 5A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18 nC @ 5 V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

865 pF @ 10 V

FET Feature

-

Power Dissipation (Max)

1.25W (Ta), 2.1W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3

Base Product Number

SI2312

 

If you want to know more about SI2312CDS-T1-GE3 diodes, or other related inductors, resistors.... and other products SI2312CDS-T1-GE3 diodes, you can contact us.

 



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