IRF510 Single FETs, MOSFETs_E-COMP GROUP INC_Integrated Circuit IC_Resistor_Capacitor_Potentiometer_Transformer_Discrete semiconductor_Memory_CPU_Diode_Triode

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TYPE	DESCRIPTION
Mfr	Vishay / Siliconix
Series	-
Package	Tube
Product Status	OBSOLETE
Package / Case	TO-220-3
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 175°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	5.6A (Tc)
Rds On (Max) @ Id, Vgs	540mOhm @ 3.4A, 10V
Power Dissipation (Max)	43W (Tc)
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-220AB
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	100 V
Gate Charge (Qg) (Max) @ Vgs	8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	180 pF @ 25 V

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