MCH3420-TL-E Transistors - FETs, MOSFETs - Single_E-COMP GROUP INC_Integrated Circuit IC_Resistor_Capacitor_Potentiometer_Transformer_Discrete semiconductor_Memory_CPU_Diode_Triode

：	MCH3420-TL-E
：	Transistors - FETs, MOSFETs - Single
：	onsemi
：	MCH3420 - N-CHA
：	-
：	Bulk
：	7577
：	-

：

MCH3420-TL-E

：

Transistors - FETs, MOSFETs - Single

：

onsemi

：

MCH3420 - N-CHA

：

Bulk

：

7577

：

TYPE	DESCRIPTION
Mfr	onsemi
Series	-
Package	Bulk
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	1.85mOhm @ 250mA, 10V
Vgs(th) (Max) @ Id	2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	3.2 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	80 pF @ 20 V
FET Feature	-
Power Dissipation (Max)	800mW (Ta)
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	3-MCPH
Package / Case	3-SMD, Flat Leads

TYPE

DESCRIPTION

Mfr

onsemi

Series

Package

Bulk

Product Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100 V

Current - Continuous Drain (Id) @ 25°C

500mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

1.85mOhm @ 250mA, 10V

Vgs(th) (Max) @ Id

2.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

3.2 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

80 pF @ 20 V

FET Feature

Power Dissipation (Max)

800mW (Ta)

Operating Temperature

150°C

Mounting Type

Surface Mount

Supplier Device Package

3-MCPH

Package / Case

3-SMD, Flat Leads


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